Schematic layout for an electrically tuned quantum dot in bilayer graphene. The stack starts from a bottom graphite backgate (red), a layer of hexagonal boron nitride (hBN, not shown), a stripe of bilayer graphene (dashed pattern), a layer of hBN (not shown), metallic split gate electrodes (green), an insulating layer of an oxide (not shown) and metallic finger gates (blue). The voltages on the graphite back gate and the split gates is tuned to maximize the gap and position the Fermi energy in the middle of the gap, such that the current along the bilayer graphene stripe has to flow in the narrow channel between the split gates. The chemical potential in this channel is then tuned locally by the finger gates (blue), either used to tune the height of a tunneling barrier or to control the number of charges on a confined region.