Semiconductor quantum devices: from GaAs to graphene

ETH Zurich

Abstract

Qubits have been realized in a number of systems, ranging from ion traps to superconducting qubits, to Rydberg atoms, to spin qubits in semiconductors and many more. Spin qubits offer the advantage of long coherence times, small device size and the prospect of integration with existing Si technology. The first charge and spin qubits were realized in GaAs-AlGaAs heterostructures because of the ease of fabrication and electronic quality of this material system. Now the community has moved on to Si-based devices driven by industrial players and the need for ever more complex device fabrication. Here we will showcase some results obtained in graphene, a new exotic material in this context, but with the same fundamental advantages as other group IV materials such as Si and Ge.