Precise control of atoms with MBE: from semiconductors to complex oxides

¹ Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
² Max Planck Institute for Solid State Research, Heisenbergstrasse. 1, 70569 Stuttgart, Germany

^* e-mail: eren.suyolcu@cornell.edu
^** e-mail: g.logvenov@fkf.mpg.de

Abstract

Molecular Beam Epitaxy (MBE) is a high-vacuum technique with atomic-layer control and precision. It is based on the chemical reaction of the atoms, molecules, or atomic clusters vaporized from the specific evaporation sources on the substrates. The molecular beam defines a unidirectional ballistic flow of atoms and/or molecules without any collisions amongst. In the late 1960s, MBE was initially developed for the growth of GaAs and (Al, Ga)As systems[1,2] due to the unprecedented capabilities and then was applied to study other material systems. MBE growth is conventionally performed in vacuum and ultra-high vacuum (UHV) (10^-8–10^-12 mbar) conditions.