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Cited article:
Europhys. News, 23 10 (1992) 183
Published online: 2017-07-13
This article has been cited by the following article(s):
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Journal of Luminescence 57 (1-6) 117 (1993)
DOI: 10.1016/0022-2313(93)90117-6
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Optical absorption evidence for quantum confinement effects in porous silicon
D.J. Lockwood, A. Wang and B. Bryskiewicz
Solid State Communications 89 (7) 587 (1994)
DOI: 10.1016/0038-1098(94)90169-4
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Three- and low-dimensional inorganic semiconductors
G.C. Papavassiliou
Progress in Solid State Chemistry 25 (3-4) 125 (1997)
DOI: 10.1016/S0079-6786(97)80886-2
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Current-voltage characteristics of porous-silicon layers
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Physical Review B 51 (3) 1562 (1995)
DOI: 10.1103/PhysRevB.51.1562
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The dielectric function of some low-dimensional Si and Ge structures
H.M Polatoglou and V Vlachoudis
Thin Solid Films 276 (1-2) 276 (1996)
DOI: 10.1016/0040-6090(95)08095-3
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Photoluminescence properties of polymeric compositions with nanocrystalline silicon
A. A. Leshok, I. N. Germanenko, S. V. Gaponenko and V. E. Borisenko
Journal of Applied Spectroscopy 61 (3-4) 610 (1994)
DOI: 10.1007/BF02606542
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